Resistive Switching Characteristics of Resistive Random Access Memory Based on a Ba x Sr 1-x TiO 3 Thin Film Grown by a Hydrothermal Method

作者：Jie Zhu, Jing He, Jingjing Lu, Changcheng Ma, Xiongfei Tao, Weizhong Liu, Zhuoming Feng, Chang Li, Yuanyuan Li, Zuoqi Hu · 发表于：IEEE Electron Device Letters · 年份：2019 · DOI：10.1109/led.2019.2931919 · 被引用次数：10 · 研究领域：Advanced Memory and Neural Computing、Transition Metal Oxide Nanomaterials、Perovskite Materials and Applications

Resistive random access memory (RRAM) is one of the most promising candidates for emerging nonvolatile memory technology. Much effort has been devoted to exploring the resistive switching (RS) mechanism of multioxide films in the RRAM, especially perovskite oxide films. In this letter, we adopted a hydrothermal method to prepare a BaxSr1-xTiO3barium strontium titanate (BST) thin film as a perovskite intermediate layer sandwiched between a top Pt electrode and a bottom TiN/Pt electrode in the RRAM cell. Based on current-voltage measurements, the result illustrated a typical bipolar RS characteristic, and with the increasing cycle count, the clockwise switching mode transformed to a counterclockwise switching mode. The double-logarithm current-voltage curves indicated different mechanisms, including ohmic conduction and space-charge-limited current, in both the set and reset states. A conductive filament (CF) model in which the RS behaviors are dominated by the movement of oxygen vacancies (VO) in the BST was adopted. In addition, the influence of the compliance current and maximum voltage is considered.