Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

作者：Ji Ung Lee, Ramya Cuduvally, Prathamesh Dhakras, Phung Nguyen, H.L. Hughes · 发表于：Scientific Reports · 年份：2019 · DOI：10.1038/s41598-018-36692-7 · 被引用次数：22 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Silicon Carbide Semiconductor Technologies

Abstract We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori’s model and includes transmission probability and drain-channel coupling parameter. The latter parameter gives rise to a theoretical R ON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.