Fast Switching $\beta$ -Ga2O3Power MOSFET With a Trench-Gate Structure

作者：Hang Dong, Shibing Long, Haiding Sun, Xiaolong Zhao, Qiming He, Yuan Qin, Guangzhong Jian, Xuanze Zhou, Yangtong Yu, Wei Guo, Wenhao Xiong, Weibing Hao, Ying Zhang, Huiwen Xue, Xueqiang Xiang, Zhaoan Yu, Hangbing Lv, Qi Liu, Ming Liu · 发表于：IEEE Electron Device Letters · 年份：2019 · DOI：10.1109/led.2019.2926202 · 被引用次数：73 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Electronic and Structural Properties of Oxides

In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010)$\beta $-Ga2O3epitaxial layer are fabricated. Enhancement mode is achieved by the gate-recess process, through thoroughly depleting the$\beta $-Ga2O3channel to get a positive threshold voltage. For the first time, by using a dynamic parameter test system, the Ga2O3MOSFET with 2-$\mu \text{m}$gate length is characterized to present short switching time, including turn-on time ($\textit {t}_{ \mathrm{\scriptscriptstyle ON}}$) of 28.6 ns and turn-off time ($\textit {t}_{ \mathrm{\scriptscriptstyle OFF}}$) of 94.0 ns. In addition, OFF-state interelectrode parasitic capacitances, including input capacitance ($\textit {C}_{\text {iss}}$) of 37 pF/mm, output capacitance ($\textit {C}_{\text {oss}}$) of 42 pF/mm, and reverse transfer capacitance ($\textit {C}_{\text {rss}}$) of 14 pF/mm are also obtained, which can account for the high switching speed. The static and dynamic switching properties of the trench-gate device show the potential of$\beta $-Ga2O3MOSFET for the high-speed switching applications.