Microstructured Porous Pyramid-Based Ultrahigh Sensitive Pressure Sensor Insensitive to Strain and Temperature

作者：Jun Chang Yang, Jin‐Oh Kim, Jinwon Oh, Se Young Kwon, Joo Yong Sim, Da Won Kim, Han Byul Choi, Steve Park · 发表于：ACS Applied Materials & Interfaces · 年份：2019 · DOI：10.1021/acsami.9b03261 · 被引用次数：597 · 研究领域：Advanced Sensor and Energy Harvesting Materials、Tactile and Sensory Interactions、Conducting polymers and applications

An ultrahigh sensitive capacitive pressure sensor based on a porous pyramid dielectric layer (PPDL) is reported. Compared to that of the conventional pyramid dielectric layer, the sensitivity was drastically increased to 44.5 kPa –1 in the pressure range <100 Pa, an unprecedented sensitivity for capacitive pressure sensors. The enhanced sensitivity is attributed to a lower compressive modulus and larger change in an effective dielectric constant under pressure. By placing the pressure sensors on islands of hard elastomer embedded in a soft elastomer substrate, the sensors exhibited insensitivity to strain. The pressure sensors were also nonresponsive to temperature. Finally, a contact resistance-based pressure sensor is also demonstrated by chemically grafting PPDL with a conductive polymer, which also showed drastically enhanced sensitivity.