MOCVD grown low dislocation density GaAs-on-V-groove patterned (001) Si for 1.3 μ m quantum dot laser applications

作者：Bei Shi, Lei Wang, Aidan A. Taylor, Simone Šuran Brunelli, Hongwei Zhao, Bowen Song, Jonathan Klamkin · 发表于：Applied Physics Letters · 年份：2019 · DOI：10.1063/1.5090437 · 被引用次数：47 · 研究领域：Semiconductor Quantum Structures and Devices、Optical Coatings and Gratings、Photonic and Optical Devices

We report the development of gallium arsenide (GaAs) films grown on V-groove patterned (001) silicon (Si) by metalorganic chemical vapor deposition. This technique can provide an advanced virtual substrate platform for photonic integrated circuits on Si. A low defect density of 9.1 × 106 cm−2 was achieved with the aspect ratio trapping capability of the V-grooved Si and dislocation filtering approaches including thermal cycle annealing and dislocation filter layers. The efficiencies of these dislocation reduction methods are quantified by statistical electron channeling contrast imaging characterization. Meanwhile, different sets of dislocation filtering layers are evaluated and optimized. To further demonstrate the suitability of GaAs on the V-grooved Si technique for Si-based photonic devices, especially for the appealing 1.3 μm quantum dot (QD) lasers, a 7-layer indium arsenide QD structure was grown on both GaAs-on-V-grooved Si and native GaAs substrates. The same photoluminescence intensity and full-width at half-maximum values were observed for both structures. The optimization methodology in this work therefore offers a feasible approach to realize high quality III–V materials on Si for large-scale integration.