Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers

作者：Hengzhi Shi, Huaimin Gu, Jihang Li, Xianqi Yang, Jinyuan Zhang, Rui Yuan, Ximeng Chen, Nana Liu · 发表于：Optics Communications · 年份：2019 · DOI：10.1016/j.optcom.2019.02.054 · 被引用次数：23 · 研究领域：GaN-based semiconductor devices and materials、Photocathodes and Microchannel Plates、Ga2O3 and related materials