40× Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip

作者：Xiaoxin Xu, Lu Tai, Tiancheng Gong, Jiahao Yin, Peng Huang, Jie Yu, Da Nian Dong, Qing Luo, Jing Liu, Zhaoan Yu, Xi Zhu, Xiu Long Wu, Qi Liu, Hangbing Lv, Ming Liu · 年份：2018 · DOI：10.1109/iedm.2018.8614593 · 被引用次数：23 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Semiconductor materials and devices

In this work, we proposed a high temperature forming scheme for 28 nm 1Mb RRAM test chip. Compared with room temperature forming scheme, the average forming voltage performed at 125 °C could be greatly reduced from 2.5 V to 1.7 V. Resistance relaxation resulted from the recombination of Vo and 02-that generally occurred after programming was effectively eliminated as the residual 02-in the filament was highly decreased. Benefit from this, retention improvement of more than 40× times was successfully achieved.