A Simple, Low Cost Ink System for Drop-on-Demand Printing High Performance Metal Oxide Dielectric Film at Low Temperature

作者：Zhennan Zhu, Jianhua Zhang, Zhongwei Zhou, Honglong Ning, Wei Cai, Jinglin Wei, Shangxiong Zhou, Rihui Yao, Xubing Lu, Junbiao Peng · 发表于：ACS Applied Materials & Interfaces · 年份：2019 · DOI：10.1021/acsami.8b14328 · 被引用次数：25 · 研究领域：Thin-Film Transistor Technologies、ZnO doping and properties、Nanomaterials and Printing Technologies

We have successfully developed an ink system containing inexpensive raw materials through a simple process and have printed ZrO x dielectric film at a relatively low annealing temperature of 250 °C. The ZrO x dielectric film afforded a leakage current density of 5.4 × 10 –6 A/cm 2 at 1 MV/cm and a dielectric constant of 10 and shows a promising future for flexible electronics. The ink system shows a temperature-induced gelation behavior, and a gel network is formed when the temperature rises. A high concentration of oxide precursors is obtained near the network area through the absorption function of polymer groups, and thus oxide structure can be formed at a relatively low temperature due to the shorter diffusion path of precursor polymerization. The microstructure of the printed ZrO x film was investigated by high resolution transmission electron microscopy (HRTEM), Fourier-transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS), and the effect of annealing temperature on film structure was studied.