Flexible Low-Voltage IGZO Thin-Film Transistors With Polymer Electret Gate Dielectrics on Paper Substrates

作者：Xiangyu Wang, Ya Gao, Zehua Liu, Jie Luo, Qing Wan · 发表于：IEEE Electron Device Letters · 年份：2018 · DOI：10.1109/led.2018.2888477 · 被引用次数：20 · 研究领域：Thin-Film Transistor Technologies、Semiconductor materials and devices、Advanced Sensor and Energy Harvesting Materials

Polymer electret shows a good electrostatic polarization effect, resulting in very high-density charge accumulation in semiconducting channel layer at low gate voltage. In this letter, graphene oxide enhanced poly(vinyl alcohol) film was used as the gate dielectric for flexible low-voltage indium-gallium-zinc-oxide thin-film transistors (TFTs) on paper substrates. High performance with a high current ON/OFF ratio of$\sim 1.8\times 10^{\textsf {7}}$, a large field-effect mobility of ~42 cm2V−1s−1, and a low subthreshold swing of 106 mV/decade was obtained. In addition, such flexible TFTs exhibit a good stability under bending condition due to the reinforcement effect of graphene oxide. Such flexible TFTs on paper substrates have potential application in next-generation low-cost flexible paper electronics.