All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

作者：Jianqiu Chen, Xiuqi Huang, Qunjie Li, Zhiqiang Fang, Honglong Ning, Ruiqiang Tao, Hongfu Liang, Yicong Zhou, Rihui Yao, Junbiao Peng · 发表于：Applied Sciences · 年份：2018 · DOI：10.3390/app9010083 · 被引用次数：3 · 研究领域：Thin-Film Transistor Technologies、ZnO doping and properties、Semiconductor materials and devices

In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C exhibited good electrical performances with a saturation mobility (μsat) of 4.25 cm2·V−1·S−1, Ion/Ioff ratio about 106, Vth of −0.97 V and SS about 0.34 V/decade. Furthermore, the devices exhibited excellent negative and positive bias stability (NBS, PBS) of only a ΔVth shift of about −0.04 V and 0.05 V after 1 h, respectively. In addition, the devices showed high transparency about 96% over the visible-light region of 400–700 nm, which indicates a great potential in transparent displays.