High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

作者：Zeyang Ren, Wanjiao Chen, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Guansheng Yuan, Kai Su, Zhiyu Lin, Yue Hao · 发表于：IEEE Journal of the Electron Devices Society · 年份：2018 · DOI：10.1109/jeds.2018.2880005 · 被引用次数：36 · 研究领域：Diamond and Carbon-based Materials Research、Semiconductor materials and devices、Metal and Thin Film Mechanics

High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at VGS= VDS= -4.5 V and an on-resistance of 65.39 Ω·mm. The transconductance keeps increasing when VGSshifts from VTH toward more negative direction, and reaches the record high value of 20 mS/mm at VGSof -4.5 V, which benefitted from the almost constant mobility of the holes in the gate voltage range of -4 VGS<; -2 V. The critical device process to realize these low on-resistance normally-off MOSFETs consists of 2-min UV ozone treatment of the H-diamond surface and thermal oxidation of aluminum film in the air to form an alumina gate dielectric.