13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications

作者：M. Ajmal Khan, Noritoshi Maeda, Masafumi Jo, Yuki Akamatsu, Ryohei Tanabe, Yoichi Yamada, Hideki Hirayama · 发表于：Journal of Materials Chemistry C · 年份：2018 · DOI：10.1039/c8tc03825b · 被引用次数：116 · 研究领域：GaN-based semiconductor devices and materials

Smart, high-power ultraviolet (UV)-B light-emitting diodes (LEDs) are demanded for real world applications, including vitamin D3 production in human skin (295–304 nm), immunotherapy (310 nm) and enriching phytochemicals in plants (310 nm).