TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

作者：Qingzhi Meng, Qijing Lin, Weixuan Jing, Feng Han, Man Zhao, Zhuangde Jiang · 发表于：IEEE Transactions on Electron Devices · 年份：2018 · DOI：10.1109/ted.2018.2869291 · 被引用次数：19 · 研究领域：Terahertz technology and applications、GaN-based semiconductor devices and materials、Superconducting and THz Device Technology

We propose a nonresonant terahertz (THz) detector based on double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) utilizing a technology computer-aided design platform. The hydrodynamic model is simplified as the drift-diffusion model for nonresonant THz detection simulation. Dependence of THz photoresponse on various structure parameters of the detector is analyzed by simulation. The two typical metrics, responsivity and noise equivalent power (NEP), are theoretically calculated for the optimization of the structure parameters. The optimized responsivity and NEP reach 5.8 kV/W and 50 pW/Hz0.5at the same gate voltage, respectively, and a minimum NEP of 20 pW/Hz0.5is obtained. The comparison between our simulation results and the experiment data of single-channel HEMT detector proves that the DC HEMT detector shows an excellent THz detection performance.