Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx

作者：Jun Zheng, Yongwang Zhang, Zhi Liu, Yuhua Zuo, Chuanbo Li, Chunlai Xue, Buwen Cheng, Qiming Wang · 发表于：IEEE Transactions on Electron Devices · 年份：2018 · DOI：10.1109/ted.2018.2867622 · 被引用次数：15 · 研究领域：Photonic and Optical Devices、Nanowire Synthesis and Applications、Advanced Photonic Communication Systems

A highly doped n-type GeSn layer with a doping concentration of approximately 5×1020cm-3was grown successfully by the sputtering epitaxy method. The current- voltage behavior of Ni/n-GeSn under various annealing temperatures was investigated. Both the high doping concentration and the formation of Ni stanogermanide led to the formation of an ohmic contact. The contact resistance was approximately 1.30 × 10-6Ω·cm-2, which is much lower than that reported for Ni/n-GeSn structures. These results suggest that heavy doping is an effective method for obtaining a low contact resistance in n-GeSn technology.