Enhancing oxidation rate of 4H–SiC by oxygen ion implantation

作者：Min Liu, Shuyuan Zhang, Xiang Yang, Xue Chen, Zhongchao Fan, Xiaodong Wang, Fuhua Yang, Chao Ma, Zhi He · 发表于：Journal of Materials Science · 年份：2018 · DOI：10.1007/s10853-018-2921-0 · 被引用次数：8 · 研究领域：Silicon Carbide Semiconductor Technologies、Semiconductor materials and devices、Thin-Film Transistor Technologies