Flexible photodetector based on large-area few-layer MoS2

作者：Feifan Yu, Mingxiang Hu, Feiyu Kang, Ruitao Lv · 发表于：Progress in Natural Science Materials International · 年份：2018 · DOI：10.1016/j.pnsc.2018.08.007 · 被引用次数：69 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Advanced Sensor and Energy Harvesting Materials

Developing flexible photodetectors is crucial for both military and civil fields. Large-area MoS 2 films from several to dozens of layers are controllably synthesized via a facile atmospheric-pressure sulfurization route of predeposited Mo films and transferred onto other substrates (e.g. SiO 2 /Si wafers, quartz slides, polymers). The flexible photodetectors were fabricated by transferring as-synthesized MoS 2 films onto interdigital electrodes patterned on polyethylene terephthalate (PET) substrates. No additional complex lithography positioning techniques were needed during the device fabrication process due to the large area of as-grown atomic thin MoS 2 films. As-obtained flexible photodetectors showed responsibilities of ~ 20 mA/W and response time of several seconds. This demonstrates the possibility of employing large-area two-dimensional semiconductors to meet the increasing demands for wearable and portable electronics.