Unveiling Defect-Related Raman Mode of Monolayer WS 2 via Tip-Enhanced Resonance Raman Scattering

作者：Chanwoo Lee, Byeong Geun Jeong, Seok Joon Yun, Young Hee Lee, Seung Mi Lee, Mun Seok Jeong · 发表于：ACS Nano · 年份：2018 · DOI：10.1021/acsnano.8b04265 · 被引用次数：136 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Graphene research and applications

Monolayer tungsten disulfide (WS 2 ) has emerged as an active material for optoelectronic devices due to its quantum yield of photoluminescence. Despite the enormous research about physical characteristics of monolayer WS 2, the defect-related Raman scattering has been rarely studied. Here, we report the correlation of topography and Raman scattering in monolayer WS 2 by using tip-enhanced resonance Raman spectroscopy and reveal defect-related Raman modes denoted as D and D′ modes. We found that the sulfur vacancies introduce not only the red-shifted A 1g mode but also the D and D′ modes by the density functional theory calculations. The observed defect-related Raman modes can be utilized to evaluate the quality of monolayer WS 2 and will be helpful to improve the performance of WS 2 optoelectronic devices.