Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

作者：Feng Teng, Kai Hu, Weixin Ouyang, Xiaosheng Fang · 发表于：Advanced Materials · 年份：2018 · DOI：10.1002/adma.201706262 · 被引用次数：511 · 研究领域：2D Materials and Applications、Ga2O3 and related materials、Gas Sensing Nanomaterials and Sensors

Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.