Tunable Resistance or Magnetoresistance Cusp and Extremely Large Magnetoresistance in Defect-Engineered HfTe 5 − δ Single Crystals

作者：Yang‐Yang Lv, Xiao Li, Lin Cao, Dajun Lin, Shu‐Hua Yao, Si-Si Chen, Songtao Dong, Jian Zhou, Y. B. Chen, Yan‐Feng Chen · 发表于：Physical Review Applied · 年份：2018 · DOI：10.1103/physrevapplied.9.054049 · 被引用次数：22 · 研究领域：2D Materials and Applications、Iron-based superconductors research、Magnetic and transport properties of perovskites and related materials

Tunable transport properties and extremely large magnetoresistance (MR) are the basic requirements of magnetosensor and magnetoactuator applications. Through defect engineering during the growth process, the authors tailor the level of Te deficiency in HfTe${}_{5\ensuremath{-}\ensuremath{\delta}}$, a nonmagnetic layered chalcogenide, to obtain a series of compositions with varying electrical and magnetotransport properties. HfTe${}_{4.92}$ presents a MR value of 2.63\ifmmode\times\else\texttimes\fi{}10${}^{4}$%, at 2 K in a 9 T magnetic field. These experiments suggest a viable approach to tuning the MR of similar compounds via defect engineering, to enable superior devices.