A theoretical study on the metal contacts of monolayer gallium nitride (GaN)

作者：Rui Sun, Guofeng Yang, Fuxue Wang, Guang Yong Chu, Naiyan Lu, Xiaowen Shen · 发表于：Materials Science in Semiconductor Processing · 年份：2018 · DOI：10.1016/j.mssp.2018.05.002 · 被引用次数：17 · 研究领域：GaN-based semiconductor devices and materials、2D Materials and Applications、Graphene research and applications