Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride

作者：Maëlis Piquemal-Banci, Regina Galceran, Florian Godel, Sabina Caneva, Marie‐Blandine Martin, Robert S. Weatherup, Piran R. Kidambi, K. Bouzéhouane, Stéphane Xavier, Abdelmadjid Anane, F. Pétroff, ALBERT FERT, Simon M.‐M. Dubois, Jean‐Christophe Charlier, John D. Robertson, Stephan Hofmann, Bruno Dlubak, Pierre Sénéor · 发表于：ACS Nano · 年份：2018 · DOI：10.1021/acsnano.8b01354 · 被引用次数：129 · 研究领域：Graphene research and applications、Quantum and electron transport phenomena、2D Materials and Applications

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of h-BN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.