Feasible method to fabricate a nickel-nanodot mask on a silicon substrate with conventional thermal annealing

作者：Xiao Kuang, J. Tian, Hongyu Guo, Ying Hou, H. Zhang, Taishan Liu · 发表于：Materiali in tehnologije · 年份：2018 · DOI：10.17222/mit.2017.006 · 被引用次数：3 · 研究领域：Optical Coatings and Gratings、Anodic Oxide Films and Nanostructures、Nanofabrication and Lithography Techniques

In this paper, a simple and feasible method to fabricate a Ni-nanodot mask on a silicon substrate is reported.Without using a high-cost rapid thermal annealing (RTA) furnace, this method was based on the conventional thermal annealing of a Ni layer deposited on a Si substrate.In addition, the influences of the Ni-layer thickness and annealing conditions on the size and density of the Ni nanodots were systematically investigated.The as-prepared Ni nanodots were well distributed, having a uniform size and a regular spherical shape.Moreover, a Si nanopillar array could be fabricated by inductively coupled plasma (ICP) etching using the as-obtained Ni-nanodot array mask.Keywords: Ni nanodot, conventional thermal annealing, ICP, Si nanopillar V ~lanku avtorji opisujejo enostavno in izvedljivo metodo za izdelavo mask iz Ni-nanopik na Si podlagi.Pri tem niso uporabili drage pe~i za hitro termi~no obdelavo, temve~konvencionalni postopek termi~nega `arjenja Ni-plasti nane{ene na Si-podlago.Sistemati~no so tudi raziskali vpliv debeline Ni-plasti in pogojev `arjenja na velikost in gostoto Ni-nanopik.Le-te so bile enakomerno razporejene, bile so enake velikosti in pravilne polkrogli~ne oblike.Poleg tega so avtorji ~lanka pokazali, da se lahko izdelajo matrice sestavljene iz Si-nanostebri~kov s pomo~jo jedkanja z induktivno sklopljeno plazmo (angl.ICP) in uporabo izdelanih Ni-nanopik.