In situ observation of conducting filament in NiO memristive devices by electroluminescence

作者：Weijian Lin, Kejian Zhu, Yangtao Su, Haibin Shi, Yang Meng, Hongwu Zhao · 发表于：Applied Physics Letters · 年份：2018 · DOI：10.1063/1.5023504 · 被引用次数：9 · 研究领域：Advanced Memory and Neural Computing、Neuroscience and Neural Engineering、Neural dynamics and brain function

By synchronously measuring the electroluminescence (EL) of Pt/NiO/Pt unipolar resistive switching (RS) devices during switching, we have nondestructively observed the dynamic evolution of conducting filaments (CFs) across the device. We demonstrate that both the random distribution and the subtle change in the chemical composition of CFs contribute to fluctuation of switching parameters. The EL emission during RS is attributed to the radiative transition through oxygen vacancy related defect levels of NiO rather than from the thermal radiation. Our findings offer a method to investigate the RS mechanism which further can be utilized to improve the stability and scalability of RS devices.