Characterization and Modeling of SiC Power MOSFETs

作者：Xiangxiang Fang · 发表于：OhioLink ETD Center (Ohio Library and Information Network) · 年份：2012 · 被引用次数：9 · 研究领域：Silicon Carbide Semiconductor Technologies、Advanced DC-DC Converters、Induction Heating and Inverter Technology

SiC power MOSFETs are great candidates for high-voltage power switching applications because of their lower on-resistance and faster switching speed compared with silicon power MOSFETs.In this study, a TO-247 packaged, 1.2KV, 15A SiC MOSFET manufactured by GE has been investigated.The static characteristics of the device have firstly been performed using an Agilent power curve tracer at room temperature to get basic device performance, including DC characteristics (currentvoltage characteristics, I-V) and AC characteristics (capacitance-voltage characteristics C-V).The input, output, reverse transfer capacitance of SiC MOSFET (C ISS , C OSS , C RSS respectively) and package stray inductances are of vital importance to the SiC MOSFET as they determine the dynamic behavior of the device during switching transients.