A 3 GHz to 10 GHz GaAs double balanced mixer

作者：Yan Pu, Zhihua Huang, Shaojun Pan, Guoqiang Wang · 发表于：2017 IEEE 3rd Information Technology and Mechatronics Engineering Conference (ITOEC) · 年份：2017 · DOI：10.1109/itoec.2017.8122521 · 被引用次数：16 · 研究领域：Radio Frequency Integrated Circuit Design、Microwave Engineering and Waveguides、Advanced Power Amplifier Design

A broadband GaAs MMIC double balanced diode ring mixer was designed in the paper. The mixer covers radio frequency (RF)/local oscillator (Lo) operating frequency range from 3 GHz to 10 GHz and the bandwidth of intermediate frequency (IF) signal is from 10MHz to 4 GHz. The mixer gets a conversion loss less than 12 dB and decent LO to RF isolation of nearly 30 dB, and the mixer also obtains good linearity with input P1dBand IIP3 of more than 18 dBm and 27 dBm. The mixer is simulated with the standard 0.25 μm GaAs pHEMT process, and the compacted Marchand balun is used to provide the differential signals for the double balanced mixer.