Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy

作者：Shuxing Zhou, Likun Ai, Ming Qi, Shumin Wang, Anhuai Xu, Qixin Guo · 发表于：Journal of Materials Science · 年份：2017 · DOI：10.1007/s10853-017-1765-3 · 被引用次数：9 · 研究领域：Semiconductor Quantum Structures and Devices、GaN-based semiconductor devices and materials、Quantum and electron transport phenomena