6-mW Single-Mode High-Speed 1550-nm Wafer-Fused VCSELs for DWDM Application

作者：A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. G. Gladyshev, S. A. Blokhin, S. A. Mikhaǐlov, V. Iakovlev, Alexei Sirbu, Grzegorz Stępniak, Łukasz Chorchos, J. P. Turkiewicz, K. O. Voropaev, Alexander S. Ionov, Mikel Agustin, N. N. Ledentsov, A. Yu. Egorov · 发表于：IEEE Journal of Quantum Electronics · 年份：2017 · DOI：10.1109/jqe.2017.2752700 · 被引用次数：50 · 研究领域：Semiconductor Lasers and Optical Devices、Photonic and Optical Devices、Semiconductor Quantum Structures and Devices

This paper presents data on wafer-fused 1550-nm vertical-cavity surface-emitting lasers (VCSELs) based on the active region and distributed Bragg reflectors (DBRs) grown by molecular beam epitaxy. VCSELs with a tunnel junction aperture diameter of 8 μm show lasing at a threshold current density jth2, an output optical power of ~4 mW, and a -3 dB bandwidth of approximately 7 GHz at a 10-mA bias current. The devices demonstrate single-mode continuous wave operation with the transverse side-mode suppression ratio (SMSR) varying in the range of 40-45 dB up to roll-over currents. The increase in mirror losses due to the etching of the top DBR makes the output optical power increase to 6 mW and causes the wallplug efficiency value to reach 20%, but SMSR remains in the range of 40-45 dB. This also makes it possible to reduce both the photon lifetime and, as a result, the effect of damping and increase the modulation bandwidth to 9 GHz. The observed open and clear eye diagrams indicate that non-return-to-zero operation is possible at bit rates of up to 30 Gbps without equalization or forward error correction. The high-output optical power and modulation performance pave the way for the dense wavelength division multiplexing application of wafer-fused 1550-nm VCSELs.