Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/Pt) 3 /Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 Multiferroic Heterostructures

作者：Bin Peng, Ziyao Zhou, Tianxiang Nan, Guohua Dong, Mengmeng Feng, Qu Yang, Xinjun Wang, Shishun Zhao, Dan Xian, Zhuangde Jiang, Wei Ren, Zuo‐Guang Ye, Nian X. Sun, Ming Liu · 发表于：ACS Nano · 年份：2017 · DOI：10.1021/acsnano.7b01547 · 被引用次数：102 · 研究领域：Multiferroics and related materials、Magnetic properties of thin films、Magnetic and transport properties of perovskites and related materials

One of the central challenges in realizing multiferroics-based magnetoelectric memories is to switch perpendicular magnetic anisotropy (PMA) with a control voltage. In this study, we demonstrate electrical flipping of magnetization between the out-of-plane and the in-plane directions in (Co/Pt) 3 /(011) Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 multiferroic heterostructures through a voltage-controllable spin reorientation transition (SRT). The SRT onset temperature can be dramatically suppressed at least 200 K by applying an electric field, accompanied by a giant electric-field-induced effective magnetic anisotropy field (Δ H eff ) up to 1100 Oe at 100 K. In comparison with conventional strain-mediated magnetoelastic coupling that provides a Δ H eff of only 110 Oe, that enormous effective field is mainly related to the interface effect of electric field modification of spin–orbit coupling from Co/Pt interfacial hybridization via strain. Moreover, electric field control of SRT is also achieved at room temperature, resulting in a Δ H eff of nearly 550 Oe. In addition, ferroelastically nonvolatile switching of PMA has been demonstrated in this system. E-field control of PMA and SRT in multiferroic heterostructures not only provides a platform to study strain effect and interfacial effect on magnetic anisotropy of the ultrathin ferromagnetic films but also enables the realization of power efficient PMA magnetoelectric and spintronic devices.