Realization of uniaxially strained, rolled-up monolayer CVD graphene on a Si platform via heteroepitaxial InGaAs/GaAs bilayers

作者：Guoming Mao, Qi Wang, Zhaoer Chai, Hao Liu, Kai Liu, Xiaomin Ren · 发表于：RSC Advances · 年份：2017 · DOI：10.1039/c6ra28482e · 被引用次数：15 · 研究领域：Graphene research and applications、Nanowire Synthesis and Applications、Quantum and electron transport phenomena

We fabricated III–V semiconductor/graphene tubular structures with micrometer scale diameter and realized graphene strain engineering through the change of diameter.