Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy

作者：Shuxing Zhou, Ming Qi, Likun Ai, Shumin Wang, Anhuai Xu, Qi Guo · 发表于：Japanese Journal of Applied Physics · 年份：2017 · DOI：10.7567/jjap.56.035505 · 被引用次数：7 · 研究领域：Semiconductor Quantum Structures and Devices、Advanced Semiconductor Detectors and Materials、Chalcogenide Semiconductor Thin Films

Abstract The effects of Bi flux and In/Ga ratio on Bi incorporation and electrical properties of InGaAsBi grown by gas source molecular beam epitaxy were systematically studied. It is found that use of a low In/Ga ratio has an enhancement effect on the incorporation of Bi and its content increases linearly with Bi flux until reach a saturation. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but does not degrade the electron mobility for the Bi content up to 6.2%. Up to 7.5% of Bi incorporation has been confirmed by Rutherford backscattering spectroscopy (RBS) and a maximum electron mobility of 5600 cm 2 ·V −1 ·s −1 at room temperature was achieved in InGaAsBi with x Bi = 6.2%, which is the highest value reported in InGaAsBi with x Bi > 5%.