A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

作者：Ruijie Xie, P. Montanini, Kerem Akarvardar, Neeraj Tripathi, Bala Haran, Stephen Johnson, Terence B. Hook, Bassem Hamieh, Daniel Corliss, J. Wang, Xiren Miao, J. Sporre, Jody Fronheiser, N. Loubet, Min-Gyu Sung, Stuart Sieg, Shinichi Mochizuki, C. Prindle, Soon‐Cheon Seo, Andrew Greene, Jeffrey C. Shearer, Andre Labonte, S. Fan, Lars W. Liebmann, R. Chao, Abraham Arceo, Kisup Chung, Keun‐Ah Cheon, Praneet Adusumilli, H. P. Amanapu, Zhichun Bi, Junghwa Cha, H.-C. Chen, Rena M. Conti, Rohit Galatage, Oleg Gluschenkov, V. Kamineni, Kyu Hong Kim, C. Lee, Fabian Lie, Zhe Liu, S. Mehta, Eric R. Miller, Hiroaki Niimi, Chunping Niu, C. Park, D. Park, M. Raymond, Bhagawan Sahu, M. Sankarapandian, S. Siddiqui, Richard G. Southwick, Lei Sun, C. Surisetty, Stan Tsai, Sun Kyu Whang, P. Xu, Yang Xu, Chun-Chen Yeh, P. Zeitzoff, J. Zhang, J. Li, J. Demarest, John Arnold, D. Canaperi, Derren Dunn, Nelson Felix, Divya Gupta, H. Jagannathan, S. Kanakasabapathy, Walter Kleemeier, Catherine B. Labelle, M. Mottura, Phil Oldiges, Spyridon Skordas, T. Standaert, T. Yamashita, Matthew Colburn, M. Na, Vamsi Paruchuri, S. Lian, R. Divakaruni, T. R. Gow, S. Lee, Andreas Knorr, H. Bu, Mukesh Khare · 年份：2016 · DOI：10.1109/iedm.2016.7838334 · 被引用次数：145 · 研究领域：Advancements in Photolithography Techniques、Nanofabrication and Lithography Techniques、Semiconductor materials and devices

We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time. Dual strained channels have been also implemented to enhance mobility for high performance applications.