Novel voltage controlled MRAM (VCM) with fast read/write circuits for ultra large last level cache

作者：Hiroki Noguchi, Kazutaka Ikegami, Keiko Abe, Shinobu Fujita, Yoichi Shiota, Takayuki Nozaki, Shinji Yuasa, Yoshishige Suzuki · 年份：2016 · DOI：10.1109/iedm.2016.7838494 · 被引用次数：33 · 研究领域：Ferroelectric and Negative Capacitance Devices、Advanced Memory and Neural Computing、Magnetic properties of thin films

This paper presents voltage controlled MRAM (VCM) with novel fast read/write circuits for nonvolatile ultra-large last level cache. Further, write error rate has dramatically been reduced by thermal stability factor control using “continuous read-write-verify” scheme. Read error rate has also improved with “read-disturb-free non-destructive-self-reference read” with unipolar write of VCM.