Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?

作者：Ruge Quhe, Xiyou Peng, Yuanyuan Pan, Meng Ye, Yangyang Wang, Han Zhang, Shenyan Feng, Qiaoxuan Zhang, Junjie Shi, Jinbo Yang, Dapeng Yu, Ming Lei, Jing Lü · 发表于：ACS Applied Materials & Interfaces · 年份：2017 · DOI：10.1021/acsami.6b14699 · 被引用次数：78 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Graphene research and applications

Experimental two-dimensional (2D) black phosphorus (BP) transistors typically appear in the form of Schottky barrier field effect transistors (SBFETs), but their performance limit remains open. We investigate the performance limit of monolayer BP SBFETs in the sub-10 nm scale by using ab initio quantum transport simulations. The devices with 2D graphene electrodes are apparently superior to those with bulk Ti electrodes due to their smaller and tunable Schottky barrier heights and the absence of metal induced gap states in the channels. With graphene electrodes, the performance limit of the sub-10 nm monolayer BP SBFETs outperforms the monolayer MoS 2, carbon nanotube, and advanced silicon transistors and even can meet the requirements of both high performance and low power logic applications of the next decade in the latest International Technology Roadmap for Semiconductors. It appears that the ML BP SBFETs have the best intrinsic device performance among the reported sub-10 nm 2D material SBFETs.