Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

作者：Chong Wang, Mengdi Zhao, Yunlong He, Xue-Feng Zheng, Xiaoxiao Wei, Wei Mao, Xiaohua Ma, Jincheng Zhang, Yue Hao · 发表于：Solid-State Electronics · 年份：2016 · DOI：10.1016/j.sse.2016.12.001 · 被引用次数：10 · 研究领域：GaN-based semiconductor devices and materials、ZnO doping and properties、Metal and Thin Film Mechanics