Thermal stability of Mg 2 Si 0.4 Sn 0.6 in inert gases and atomic-layer-deposited Al 2 O 3 thin film as a protective coating

作者：Libin Zhang, Xi Chen, Yinglu Tang, Li Shi, G. Jeffrey Snyder, John B. Goodenough, Jianshi Zhou · 发表于：Journal of Materials Chemistry A · 年份：2016 · DOI：10.1039/c6ta07611d · 被引用次数：30 · 研究领域：Advanced Thermoelectric Materials and Devices、Thermal properties of materials、Semiconductor materials and interfaces

The structure and thermoelectric properties of Mg 2 Si 0.4 Sn 0.6 are unstable above 700 K. We demonstrated atomic-layer-deposited Al 2 O 3 as a protective coating to address this problem.