A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor

作者：M. Kitagawa, Ichiro Omura, Shunsuke Hasegawa, Tomoyasu Inoue, A. Nakagawa · 年份：2002 · DOI：10.1109/iedm.1993.347221 · 被引用次数：237 · 研究领域：Silicon Carbide Semiconductor Technologies、Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices

This paper proposes a new MOS-gate transistor structure (IEGT) for the first time, that realizes enhanced electron injection so that the carrier distribution takes a form similar to that of a thyristor and a low forward voltage drop is attained even for 4500 V devices. A developed simple analytical one dimensional model can predict a sufficiently accurate current voltage curve and clarifies a new design criterion for IEGT operation. A fabricated 4500 V IEGT realized a 2.5 V forward voltage drop at 100 A/cm/sup 2/. The IEGT had a current density over ten times that of conventional trench gate IGBT at 2.5 V forward voltage drop. An operation mode of IEGT has been theoretically and experimentally confirmed.>