Ti and NiPt/Ti liner silicide contacts for advanced technologies

作者：Praneet Adusumilli, Emre Alptekin, M. Raymond, N. Breil, F. Chafik, C. Lavoie, D. Ferrer, S. Jain, V. Kamineni, Ahmet S. Özcan, S.E. Allen, Junpeng An, Veeraraghavan Basker, R. Bolam, H. Bu, J. Cai, J. Demarest, B. Doris, Edward Engbrecht, S. Fan, Jody Fronheiser, Oleg Gluschenkov, Dechao Guo, B. Haran, David F. Hilscher, H. Jagannathan, Dong Hun Kang, Yiqing Ke, J. Kim, Siyuranga O. Koswatta, Aditya Kumar, Andre Labonte, Romain Lallement, W. Lee, Y. Lee, J. Li, C-H. Lin, B. Liu, Zhe Liu, N. Loubet, Neal Makela, Shinichi Mochizuki, Bradley Morgenfeld, S. Narasimha, Tayel Nesheiwat, Hiroaki Niimi, Chunping Niu, M. Oh, C. Park, Rahul Ramachandran, Jeremy Rice, V. Sardesai, Jeffrey C. Shearer, C. Sheraw, Christel Tran, Gen Tsutsui, H. Utomo, Keith H.K. Wong, Ruijie Xie, T. Yamashita, Yingjie Yan, Chun-Chen Yeh, Meiqi Yu, N. Zamdmer, Ning Zhan, B. Zhang, Vamsi Paruchuri, Cindy Goldberg, Walter Kleemeier, S. R. Stiffler, R. Divakaruni, W.K. Henson · 年份：2016 · DOI：10.1109/vlsit.2016.7573382 · 被引用次数：31 · 研究领域：Semiconductor materials and interfaces、Molecular Junctions and Nanostructures、3D IC and TSV technologies

We discuss the transition to Ti based silicides for source-drain (SD) contacts for 3D FinFET devices starting from the 14nm node & beyond. Reductions in n-FET & p-FET contact resistances are reported with the optimization of metallization process & dopant concentrations. The optimization of SiGe epitaxy and addition of a thin interfacial NiPt(10%) are found to significantly improve p-FET contact performance.