Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

作者：Xun Li, Degang Zhao, Jing Yang, Desheng Jiang, Z.S. Liu, Ping Chen, J.J. Zhu, Wei Liu, Xinlei He, X.J. Li, Feng Liang, Liqun Zhang, J.P. Liu, Hui Yang, Y.T. Zhang, Gaoming Du · 发表于：Superlattices and Microstructures · 年份：2016 · DOI：10.1016/j.spmi.2016.06.023 · 被引用次数：19 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、Semiconductor Quantum Structures and Devices