Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator

作者：Huitao Wang, Daibing Zhou, Ruikang Zhang, Dan Lu, Lingjuan Zhao, Hongliang Zhu, Wei Wang, Chen Ji · 发表于：Chinese Physics Letters · 年份：2015 · DOI：10.1088/0256-307x/32/8/084203 · 被引用次数：8 · 研究领域：Semiconductor Quantum Structures and Devices、Photonic and Optical Devices、Optical Network Technologies

We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f −3 dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.