Electronic‐Field Control of Two‐Dimensional Electrons in Polymer‐Gated–Oxide Semiconductor Heterostructures

作者：Masaki Nakano, Atsushi Tsukazaki, Akira Ohtomo, Kazunori Ueno, Shunsuke Akasaka, Hiroyuki Yuji, Ken Nakahara, Tomoteru Fukumura, M. Kawasaki · 发表于：Advanced Materials · 年份：2009 · DOI：10.1002/adma.200902162 · 被引用次数：49 · 研究领域：Electronic and Structural Properties of Oxides、ZnO doping and properties、Ferroelectric and Piezoelectric Materials

A defect-free and electronically abrupt polymer/oxide interface can be achieved by spin-coating of PEDOT:PSS on ZnO-based heterostructures. The interface yielding Schottky contact leads to the successful modulation of quantum 2D transport in MgZnO/ZnO interfaces via the electric-field effect, which indicates that the polymer/oxide interface enables a high-mobility field-effect transistor.