Scientific/Technical Report

作者：NY (United States) City Univ. of New York (CUNY), Myriam P. Sarachik, USDOE Office of Science (SC) · 年份：2014 · DOI：10.2172/1140147 · 被引用次数：19 · 研究领域：Quantum and electron transport phenomena、Surface and Thin Film Phenomena、Advanced Thermoelectric Materials and Devices

Measurements of the thermoelectric power of the dilute, strongly-interacting two-dimensional electron system in high-mobility, low-disorder silicon MOSFETs were obtained at low temperatures down to 0.2 K. With decreasing density n_s, the thermopower was found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density n_t. The critical behavior of the thermopower observed in our experiments provides clear evidence for an interaction-induced quantum phase transition to a new phase at low density in a strongly interacting 2D electron system, thereby settling a 20-year debate.