Recent Progress in Phase-ChangeMemory Technology

作者：Geoffrey W. Burr, M. BrightSky, Abu Sebastian, Huai‐Yu Cheng, Jau-Yi Wu, Sang‐Bum Kim, Norma Sosa, Nikolaos Papandreou, Hsiang-Lan Lung, Haralampos Pozidis, Evangelos Eleftheriou, Chung Lam · 发表于：IEEE Journal on Emerging and Selected Topics in Circuits and Systems · 年份：2016 · DOI：10.1109/jetcas.2016.2547718 · 被引用次数：387 · 研究领域：Advanced Memory and Neural Computing、Phase-change materials and chalcogenides、Ferroelectric and Negative Capacitance Devices

We survey progress in the PCM field over the past five years, ranging from large-scale PCM demonstrations to materials improvements for high–temperature retention and faster switching. Both materials and new cell designs that support lower-power switching are discussed, as well as higher reliability for long cycling endurance. Two paths towards higher density are discussed: through 3D integration by the combination of PCM and 3D-capable access devices, and through multiple bits per cell, by understanding and managing resistance drift caused by structural relaxation of the amorphous phase. We also briefly survey work in the nascent field of brain-inspired neuromorphic systems that use PCM to implement non-Von Neumann computing.