Ultrasmooth, High Electron Mobility Amorphous In–Zn–O Films Grown by Atomic Layer Deposition

作者：Do-Joong Lee, Jang‐Yeon Kwon, Jiyeon Kim, Ki-Ju Kim, Ki-Ju Kim, Seong‐Yong Cho, Seong-Yong Cho, Soo‐Hyun Kim, Jimmy Xu, Ki‐Bum Kim, Ki‐Bum Kim · 发表于：The Journal of Physical Chemistry C · 年份：2013 · DOI：10.1021/jp409738f · 被引用次数：35 · 研究领域：ZnO doping and properties、Thin-Film Transistor Technologies、Transition Metal Oxide Nanomaterials

Ultrasmooth and highly conductive amorphous In–Zn–O ( a -IZO) films are grown by atomic layer deposition (ALD). This opens a new pathway to highly transparent and conductive oxides with an extreme conformality. In this process, a -IZO films of various compositions are deposited by alternate stacking of ZnO and In 2 O 3 atomic-layers at a temperature of 200 °C. The IZO films have an amorphous phase over a wide composition range, 43.2–91.5 at %, of In cation ratio. The In-rich a -IZO film (83.2 at % In) exhibits a very low resistivity of 3.9 × 10 –4 Ω cm and extremely high electron mobility in excess of 50 cm 2 V –1 s –1, one of the highest among the reported ALD-grown transparent conducting oxides. Moreover, it exhibits an ultrasmooth surface (∼0.2 nm in root-mean-square roughness), and can be conformally coated onto nanotrench structures (inlet size: 25 nm) with excellent step coverage of 96%.