Electrochemical Characteristics of Al 2 O 3 -Doped ZnO Films by Magnetron Sputtering

作者：He-Qun Dai, Hao Xu, Yong‐Ning Zhou, Fang Lu, Zheng‐Wen Fu · 发表于：The Journal of Physical Chemistry C · 年份：2011 · DOI：10.1021/jp208745n · 被引用次数：51 · 研究领域：ZnO doping and properties、Advancements in Battery Materials、Advanced battery technologies research

Al 2 O 3 -doped ZnO (AZO) films have been prepared by radio frequency (rf) magnetron sputtering. The electrical properties and electrochemical behavior are investigated by Hall measurements, galvanostic cycling, and cyclic voltammograms. The result demonstrates that doping with a small amount of Al 2 O 3 (<3 wt %) can improve the electrochemical performance of ZnO significantly. Among all of the AZO films, AZO2 (2 wt % Al 2 O 3 ) film shows the best behavior with a large reversible specific capacity around 590 mAh g –1 and excellent capacity retention. High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) measurements confirm the formation of LiAl and nanosized Al 2 O 3 during the first discharge and charge processes, respectively. The electrochemical reaction mechanism of AZO with lithium is proposed. It is believed that the nanosized Al 2 O 3 formed after the charge process in AZO films plays an important role in the improvement of electrochemical performance.