Energy of a Polaron in a Wurtzite Nitride Finite Parabolic Quantum Well

作者：Fengqi Zhao, Jian Gong · 发表于：Chinese Physics Letters · 年份：2007 · DOI：10.1088/0256-307x/24/5/056 · 被引用次数：7 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、Quantum and electron transport phenomena

The effects of electron–phonon interaction on energy levels of a polaron in a wurtzite nitride finite parabolic quantum well (PQW) are studied by using a modified Lee–Low–Pines variational method. The ground state, first excited state, and transition energy of the polaron in the GaN/Al 0.3 Ga 0.7 N wurtzite PQW are calculated by taking account of the influence of confined LO(TO)-like phonon modes and the half-space LO(TO)-like phonon modes and considering the anisotropy of all kinds of phonon modes. The numerical results are given and discussed. The results show that the electron–phonon interaction strongly affects the energy levels of the polaron, and the contributions from phonons to the energy of a polaron in a wurtzite nitride PQW are greater than that in an AlGaAs PQW. This indicates that the electron–phonon interaction in a wurtzite nitride PQW is not negligible.