Dually Active Silicon Nanowire Transistors and Circuits with Equal Electron and Hole Transport

作者：André Heinzig, Thomas Mikolajick, Jens Trommer, Daniel F. Grimm, Walter Michael Weber · 发表于：Nano Letters · 年份：2013 · DOI：10.1021/nl401826u · 被引用次数：177 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Nanowire Synthesis and Applications、Semiconductor materials and devices

We present novel multifunctional nanocircuits built from nanowire transistors that uniquely feature equal electron and hole conduction. Thereby, the mandatory requirement to yield energy efficient circuits with a single type of transistor is shown for the first time. Contrary to any transistor reported up to date, regardless of the technology and semiconductor materials employed, the dually active silicon nanowire channels shown here exhibit an ideal symmetry of current-voltage device characteristics for electron (n-type) and hole (p-type) conduction as evaluated in terms of comparable currents, turn-on threshold voltages, and switching slopes. The key enabler to symmetry is the selective tunability of the tunneling transmission of charge carriers as rendered by the combination of the nanometer-scale dimensions of the junctions and the application of radially compressive strain. To prove the advantage of this concept we integrated dually active transistors into cascadable and multifunctional one-dimensional circuit strings. The nanocircuits confirm energy efficient switching and can further be electrically configured to provide four different types of operation modes compared to a single one when employing conventional electronics with the same amount of transistors.