Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

作者：Andrew Armstrong, Mary H. Crawford, Asanka Jayawardena, A. C. Ahyi, Sarit Dhar · 发表于：Journal of Applied Physics · 年份：2016 · DOI：10.1063/1.4943261 · 被引用次数：186 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Advanced Photocatalysis Techniques

Solar-blind photodetection and photoconductive gain >50 corresponding to a responsivity >8 A/W were observed for β-Ga2O3 Schottky photodiodes. The origin of photoconductive gain was investigated. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. It is concluded that self-trapped hole formation near the Schottky diode lowers the effective Schottky barrier in reverse bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga2O3 photodetectors.