Preparation of Sapphire for High Quality III-Nitride Growth

作者：Jie Cui, A. Sun, M. Reshichkov, F. Yun, A. A. Baski, H. Morkoç̌ · 发表于：MRS Internet Journal of Nitride Semiconductor Research · 年份：2000 · DOI：10.1557/s1092578300000077 · 被引用次数：43 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、Silicon Carbide Semiconductor Technologies