Electronic and magnetic properties of n-type and p-doped MoS 2 monolayers

作者：Xu Zhao, Peng Chen, Congxin Xia, Tianxing Wang, Xianqi Dai · 发表于：RSC Advances · 年份：2016 · DOI：10.1039/c5ra27540g · 被引用次数：59 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Chalcogenide Semiconductor Thin Films

The electronic and magnetic properties of n- and p-type impurities by means of group V and VII atoms substituting sulfur in a MoS 2 monolayer were investigated using first-principles methods based on density functional theory.