Intersubband transitions in Al 0.82 In 0.18 N/GaN single quantum well

作者：Yuzhou Wang, Li Ding, Lei Li, Ning-Yang Liu, Lei Liu, Wenyu Cao, Weihua Chen, Xiao-Dong Hu · 发表于：Chinese Physics B · 年份：2011 · DOI：10.1088/1674-1056/20/9/094207 · 被引用次数：1 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、Spectroscopy and Laser Applications

The influence of the width of a lattice-matched Al 0.82 In 0.18 N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrödinger and Poisson equations self-consistently. The wavelength of 1–2 ISBT increases with L , the thickness of the single quantum well, ranging from 2.88 μm to 3.59 μm. The absorption coefficients of 1–2 ISBT increase with L at first and then decrease with L , with a maximum when L is equal to 2.6 nm. The wavelength of 1–3 ISBT decreases with L at first and then increases with L , with a minimum when L is equal to 4 nm, ranging from approximately 2.03 μm to near 2.11 μm. The absorption coefficients of 1–3 ISBT decrease with L . The results indicate that mid-infrared can be realized by the Al 0.82 In 0.18 N/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.